Dry Etching Process in InP Gunn Device Technology Utilizing Inductively Coupled Plasma (ICP)
نویسندگان
چکیده
In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifically, utilizing an advanced dry etching tool to define InP Gunn diode mesas. Unlike FeCl3-based photochemical etches, the Inductively Coupled Plasma (ICP) offers excellent sidewall anisotropy and uniformity, which provides improved process consistency to facilitate mass manufacturablity of millimeter wave Gunn oscillators.
منابع مشابه
Study and optimization of room temperature inductively coupled plasma etching of InP using Cl2/CH4/H2 and CH4/H2
We report an optimized room-temperature etching recipe for Indium Phosphide (InP) based on the inductively coupled plasma (ICP) reactive-ion etch using Cl2/CH4/H2 gasses. The process was optimized using design of experiment (DOE) (Taguchi method). The results, in terms of etch rate, surface roughness and etched profile, are compared with the more conventional CH4/H2 without chlorine. The Cl2bas...
متن کاملStudy On Feature Of Silicon Microtrenches With A Multiplexed Inductively Coupled Plasma Etcher
In this paper, dry etching of silicon micro-trenches were completed with a time multiplexed inductively coupled plasma (ICP) etcher. By change the time of etching and passivation cycles, applied electrode and coil powers, gas flow rates and the gas flow overlap due to the finite time response of the mass flow controllers, the etch rate of silicon and mask materials, aspect ratio, the profiles o...
متن کاملLow sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si=SiGe resonant interband tunnel diodes
The effect and influence of dry plasma etching processes of Si=SiGe using HBr for the formation of diode mesa structures has been investigated to minimise sidewall leakage current. To characterise sidewall damage electrically, Si-based resonant interband tunnel diodes (RITD) were processed and the completed RITDs compared by their peak-to-valley current ratio (PVCR) and valley current density (...
متن کاملAdvanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications
Plasma processing techniques are one of the cornerstones of modern semiconductor fabrication. Low pressure plasmas in particular can achieve high radical density, high selectivity, and anisotropic etch profiles at low temperatures and mild voltages. This gentle processing environment prevents unwanted diffusion and degradation of materials due to heat and lattice damage from ion bombardment. Pl...
متن کاملFabrication of microcoil/microsprings for novel chemical and biological sensing
This paper reports the fabrication of a novel microsensor structure using inductively coupled plasma source (ICP) dry etching process. The novel sensor is based on a SiO2/Si/SU-8 trilayered microcoil/microspring structure. The diameter of the microcoil was approximately 600 m. The ICP process and SU-8 exposing time are discussed. The SiO2 layer can be conveniently modified according to typical ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1999